2SB1132P AITSEMI
Document overview
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Technical content
AiT Semiconductor Inc. www.ait-ic.com 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - - 1 - DESCRIPTION FEATURES The 2SB1132 is available in SOT-89 Package. Available in SOT-89 Package. ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-89 2SB1132P 2SB1132Q 2SB1132R Note SPQ: 1,000pcs/Reel AiT provides all RoHS Compliant Products 1. Base 2. Collector 3. Emitter
AiT Semiconductor Inc. www.ait-ic.com 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA=25°C -VCBO, Collector Base Voltage 40V -VCEO, Collector Emitter Voltage 32V -VEBO, Emitter Base Voltage 5V -IC, Collector Current - DC -ICP, Collector Current - PulseNOTE1 Ptot, Total Power Dissipation 0.5W 2WNOTE2 TJ, Junction Temperature 150°C TSTG, Storage Temperature Range -55°C ~150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of th e device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Single pulse, PW = 100 ms. NOTE2: When mounted on a 40 X 40 X 0.7 mm ceramic board.
ELECTRICAL CHARACTERISTICS
TA=25°C Parameter Symbol Conditions Min. Typ. Max. Unit Breakdown Voltage -V(BR)CBO -IC=50μA 40 - - V -V(BR)CEO -IC=1mA 32 - - V -V(BR)EBO -IE=50μA 5 - - V Collector Cutoff Current -ICBO -VCB=20V - - 0.5 μA Emitter Cutoff Current -IEBO -VEB=4V - - 0.5 μA Collector Emitter Saturation Voltage -VCE(sat) -IC=500mA, -IB=50mA - - 0.5 V DC Current Gain hFE -VCE=3V, -IC= 100mA Current Gain Group P 82 - 180 - Q 120 - 270 R 180 - 390 Transition Frequency fT IE=50mA, -VCE=5V, f=30 MHz - 150 - MHz Output Capacitance Cob -VCB=10V, f=1 MHz - - 30 pF
AiT Semiconductor Inc. www.ait-ic.com 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - - 3 - TYPICAL PERFORMANCE CHARACTERISTICS 1. Grounded Emitter Propagation Characteristics 2. Grounded Emitter Output Characteristics 3. DC Current Gain vs. Collector Current (I) 4. DC Current Gain vs. Collector Current (II) 5. Collector-Emitter Saturation Voltage vs. Collector Current 6. Collector-Emitter Saturation Voltage vs. Base Current
AiT Semiconductor Inc. www.ait-ic.com 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - - 4 - 7. Gain Bandwidth Product vs. Emitter Current 8. Collector output Capacitance vs. Collector-Base Voltage 9. Safe Operation area 10. Transient Thermal Resistance
AiT Semiconductor Inc. www.ait-ic.com 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - - 5 -
PACKAGE INFORMATION
Dimension in SOT-89 (Unit: mm)
AiT Semiconductor Inc. www.ait-ic.com 2SB1132 GENERAL PURPOSE TRANSISTOR PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR REV1.1 - JUN 2014 RELEASED, JUN 2019 UPDATED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or server property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.