2SB1126 SANYO

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Features

+ High DC current gain (4000 or greater). . Large current capacity. » Very small size making it easy to provide high-density, small-sized hybrid IC's, ( ): 28B1126 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vezo (-)80 v Collector to Emitter Voltage Vogg (~)50 v Emitter to Base Voltage VeRo (-)10 v Collector Current Ig (-)1.5 A Collector Current(Pulse) Icp (-)3 A Collector Dissipation Po 500 mW Mounted on ceramic board (250mm? x 0.8mm)1.5 wo: Junction Temperature Tj 150 °c Storage Temperature Tstg ~55 to +150 % Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ipgo Vop=(-)40V, Ip=0 (-)100 nA Emitter Cutoff Current Ippo Vept(-)8V,Ip=0 (-)100 nA DC Current Gain hpgl Voge (-)2V,Ip=(-)500mA 4000 bpp2 Vop=(~)2V,Ic=(-)10mA 3000 Gain-Bandwidth Product fp Voge (-) 10V,I¢=(-)50mA 120 MHz C-E Saturation Voltage Vor(sat) Ic=(-)500mA,Ip=(-)0.5mA (-)0.9(-)1.5 V B-E Saturation Voltage Vpp(sat) Ic=(-)500mA,Ip=(-)0.5mA (=) 1.5(-)2.0 V C-B Breakdown Voltage = V(prycpo I¢=(~) 10HA,I_=0 (~)80 v C-E Breakdown Voltage = V(pr)cRq I¢=(~-) 1mA, Rag=oo (~)50 v E-B Breakdown Voltage VBR) EB0 Tge(~)10pA, Peo (-)10 v Marking 2SB1126:BI 28D 16 26:DI Package Dimensions 2038 (unit:mm) 45 15 me Cl AUAE afk Lf 339 Oe E: Emitt (ene) G1 Collector B: Base SANYO: PCP (Bottom View) SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN _f 4107KI/3055MW,TS No.1721-1/3

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2SB1126/2SD1626 : ee Pc - Ta ASO = [ | | [] 28B11267'28D1626 vel TT TT 28B1126/ 2801626 ad a es ref <. TTSNINE ATT Supe ‘ | AAA TT ep Set Pol FINLEY & IN > CET Ne EIN am S12 OF so ws > BTN] ERS CE & 10 IND ° 5 @N cl au Sey, Fatt | Re AAT fo “de Hy Ne é JT] TT hk WAL I ane Te \\) = Xe Sort ft PTA TN 25, 3 8 oe tea eet | 3 Sooo so 30 | | fq Sink |) + qd sr PINE + ol i N G Gj ] NT 8 | PRX © 3tror pNP, minus sign 1s omitted § Pe * 1 TT | o 7. fe 8 a 10 10 wo Ambient Tenperature,Ta - °C Collector to Emitter Voltage, Vog - V HENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss, WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affilates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is acourate and reliable, but no guarantees are made or implied regarting its use or any infringements of intellectual property rights or other rights of third parties. ee eeeesesSsSsSSSSSSSSSSSSSSSSSsSssSsSSSSSSSSSSSSSSSSSSSSSSSMses No. 1721-3/3