2SB1125 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1125 ■ Features
- Collector Current Capability IC=-0.7A
- Collector Emitter Voltage VCEO=-50V
- Complements the 2SD1625 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 SOT-89 Unit:mm ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -10 Collector Current - Continuous IC -0.7 Collector Current - Pulse ICP -2 0.5 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Collector Power Dissipation PD W (Note.1) Note.1: mounted on ceramic substrate (250mm2X0.8mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -10 mA， RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -10 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -8V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-0.1mA -1.2 Base - emitter saturation voltage VBE(sat) IC=-100mA, IB=-0.1mA -2 VCE= -2V, IC= -50mA 5000 VCE=- 2V, IC= -500mA 3000 Collector output capacitance Cob VCB= -10V, f=1MHz 18 pF Transition frequency fT VCB= -5V, IC=-50mA 170 MHZ DC current gain V V uA hFE ■ Marking Marking BH
www.kexin.com.cn2 Transistors PNP Transistors 2SB1125 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1125 ■ Typical Characterisitics