2SD1624T-TD-E SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage
  • Fast switching speed • Large current capacity and wide ASO Specifi cations ( ): 2SB1124 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)60 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)3 A Collector Current (Pulse) I CP (- -)6 A Continued on next page. Package Dimensions unit : mm (typ) 7007B-004

80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307AT, TS

PNP/NPN Epitaxial Planar Silicon Transistors High Current Switching

Applications

http://www.sanyosemi.com/en/network/ Product & Package Information

  • Package : PCP
  • JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking Electrical Connection TD 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View 2SB1124S-TD-E 2SB1124S-TD-H 2SB1124T-TD-E 2SB1124T-TD-H 2SD1624S-TD-E 2SD1624S-TD-H 2SD1624T-TD-E 2SD1624T-TD-H BG LOT No. DG LOT No. 2SD16242SB1124 RANK RANK 2SD1624 2SB1124

No.2019-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation P C 500 mW When mounted on ceramic substrate (250mm ×0.8mm) 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain hFE1V CE=(- -)2V, IC=(- -)100mA 100* 560* hFE2V CE=(- -)2V, IC=(- -)3A 35 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 150 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (39)25 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)2A, IB=(- -)100mA (- -0.35)0.19 (- -0.7)0.5 V Base-to-Emitter Saturation Voltage V BE(sat) V CE=(- -)2A, IC=(- -)100mA (- -)0.94 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)60 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specifi ed Test Circuit. (70)70 ns Storage Time t stg (450)650 ns Fall Time t f (35)35 ns * ; The 2SB1124/2SD1624 are classifi ed by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SB1124S-TD-E PCP 1,00pcs./reel Pb Free 2SB1124S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SB1124T-TD-E PCP 1,00pcs./reel Pb Free 2SB1124T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624S-TD-E PCP 1,00pcs./reel Pb Free 2SD1624S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624T-TD-E PCP 1,00pcs./reel Pb Free 2SD1624T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free VR RB 25V--5V + + 50Ω INPUT OUTPUT 25Ω 100μF 470 μF PW=20μs IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. IB1 D.C.≤1% IB2

No.2019-3/7 IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A hFE -- IC hFE -- IC IC -- VBE IC -- VBE Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V DC Current Gain, hFE DC Current Gain, hFE IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --5.0 --3.0 --2.0 --1.0 --4.0 --4.5 --2.5 --1.5 --0.5 --3.5 IB=0 ITR08907 2SB1124 --5mA --10mA --20mA --50mA --100mA --200mA --2.0 --1.2 --0.8 --0.4 --1.6 --1.8 --1.0 --0.6 --0.2 --1.4 IB=0 ITR08909 2SB1124 --2mA --4mA --6mA --8mA --14mA --12mA --10mA 5.0 3.0 2.0 1.0 4.0 4.5 2.5 1.5 0.5 3.5 IB=0 ITR08908 2SD1624 5mA 10mA 20mA 80mA 60mA 40mA 100mA 2.0 1.2 0.8 0.4 1.6 1.8 1.0 0.6 0.2 1.4 048 2 0 161226 1 8 1410 IB=0 ITR08910 2SD1624 2mA 1mA 3mA 4mA 6mA 5mA 8mA 7mA --3.2 --2.8 --2.4 --1.6 --2.0 --1.2 --0.8 --0.4 ITR08911 Ta=75 --25 2SB1124 VCE= --2V 3.2 2.8 2.4 1.6 2.0 1.2 0.8 0.4 ITR08912 Ta=75 --25 2SD1624 VCE=2V 1000 100 ITR08913 2SB1124 VCE= --2V Ta=75°C 25°C --25°C 1000 100 23 50.01 23 5 50.1 23777 1.0 ITR08914 2SD1624 VCE=2V Ta=75°C 25°C --25°C Collector Current, IC -- ACollector Current, IC -- A

No.2019-4/7 fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF VCE(sat) -- ICVCE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV 23 50.1 10 23 50.01 23 5 1.0 100 1000 ITR08915 2SB1124 2SD1624 1.0 10 1.0 27 35 10027 35 ITR08916 --100 --10 --1000 ITR08917 2SB1124 IC / IB=20 75°C25°C Ta= --25 100 1000 23 5 7770.01 23 5 3 50.1 21.0 ITR08918 2SD1624 IC / IB=20 25°C Ta=75°C --25°C 2SB1124 / 2SD1624 VCE=10V 2SB1124 2SD1624 2SB1124 / 2SD1624 f=1MHz VBE(sat) -- ICVBE(sat) -- IC Collector Current, IC -- ACollector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V A S O PC -- Ta Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W 1.0 0.1 1.0 10 25 7 33 10025 7 357 ITR08921 1.8 1.6 1.5 1.4 1.2 0.8 1.0 0.6 0.5 0.4 0.2 0 20 40 60 100 120 160 14080 ITR08922 2SB1124 / 2SD1624 --1.0 --10 ITR08919 2SB1124 IC / IB=20 25°C Ta=75°C --25°C 1.0 23 5 7770.01 23 5 23 50.1 1.0 ITR08920 2SD1624 IC / IB=20 25°C 75°C Ta= --25°C ICP=6A 100ms10ms 1ms DC operation 2SB1124 / 2SD1624 Ta=25°C Single pulse For PNP, minus sign is omitted. Mounted on a ceramic board (250mm 2✕0.8mm) Mounted on a ceramic board (250mm 2✕0.8mm) No heat sink For PNP, the minus sign is omitted. For PNP, the minus sign is omitted. IC=3A

No.2019-5/7 Bag Packing Specifi cation 2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H, 2SD1624T-TD-E, 2SD1624T-TD-H

No.2019-6/7 Outline Drawing Land Pattern Example 2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H, 2SD1624T-TD-E, 2SD1624T-TD-H Mass (g) Unit 0.058 * For reference mm Unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45° 45°

No.2019-7/7PS This catalog provides information as of August, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.