2SB1124_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1124 ■ Features
- Low collector-to-emitter saturation voltage.
- Large current capacity and wide ASO.
- Fast switching speed.
- Complementary to 2SD1624 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -3 Collector current -Pulse ICP -6 Collector Power Dissipation 0.5 (Note.1) 1.5 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W Note.1: Mounted on ceramic board (250mm ×0.8mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-100mA -0.35 -0.7 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-100mA -0.94 -1.2 VCE= -2V, IC= -100 mA 100 560 VCE= -2V, IC= -3 A 35 Turn-ON Time ton 70 Storage Time tstg 450 Fall Time tf 35 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 39 pF Transition frequency fT VCE= -10V, IC= -50mA 150 MHz DC current gain hFE V See specified Test Circuit. ns V uA ■ Classification of hfe(1) Type 2SB1124-R 2SB1124-S 2SB1124-T 2SB1124-U Range 100-200 140-280 200-400 280-560 Marking BG R* BG S* BG T* BG U*
www.kexin.com.cn2 Transistors PNP Transistors 2SB1124 ■ Typical Characterisitics Switching Time Test Circuit
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1124 ■ Typical Characterisitics