2SB1123 YFWDIODE

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1 / 4 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. PNP Transistor Simplified outline(SOT-89) 1.Base 2.Collector 3.Emitter ■ Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SD1623 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector Base Voltage V CBO -60 Collector Emitter Voltage V CEO -50 Emitter Base Voltage V EBO Collector Current Continuous I C Collector current -Pulse I CP Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature T J 150 Storage Temperature range T stg -55 to 150 V A P C W Note.1: Mounted on ceramic board (250mm ×0.8mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage V CBO Ic= -100 μA， I E =0 -60 Collector- emitter breakdown voltage V CEO Ic= mA， R BE =∞ -50 Emitter base breakdown voltage V EBO I E -100μA， I C =0 -6 Collector-base cut-off current I CBO V CB -50V I E =0 -0.1 Emitter cut-off current I EBO V EB -5V I C =0 -0.1 Collector-emitter saturation voltage V CE(sat) I C =-1 I B =-50mA -0.3 -0.7 Base emitter saturation voltage V BE(sat) I C =-1 I B =-50mA -0.9 -1.2 V CE -2V, I C -100 mA 100 560 V CE -2V, I C -1.5 A 40 Turn-ON Time t on Storage Time t stg 450 Fall Time t f Collector output capacitance C ob V CB –10V, I E f 1MHz 22 pF Transition frequency f T V CE -10V, I C -50mA 150 MHz See specified Test Circuit. ns V uA DC current gain h FE V ■ Classification of h fe(1) Type 2SB1123-R 2SB1123-S 2SB1123-T 2SB1123-U Range 100-200 140-280 200-400 280-560 Marking BF R* BF S* BF T* BF U*

2 / 4 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics --2.4 --1.6 --1.2 --0.8 --0.4 --2.0 IC -- VCE IB=0 2SB1123 Pulse --2mA --8mA --6mA --4mA --20mA --10mA --50mA --1200 --800 --600 --400 --200 --1000 IC -- VCE IB=0 2SB1123 Pulse --3mA --2mA --1mA --7mA --6mA --5mA --4mA Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA hFE -- IC 1000 100 2 3 5--10 5532--100 2 377 --1000 2SB1123 VCE= --2V Collector Current, IC -- mA DC Current Gain, hFE --1200 --1000 --800 --600 --400 --200 IC -- VBE 2SB1123 VCE= --2V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA fT -- IC 1000 100 2 3 5--10 2 3 5--100 2 377 --1000 2SB1123 VCB=10V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Cob -- VCB 01--0.1-- 100 2 73 5 --1002 73 5 2SB1123 f=1MHz Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF

3 / 4 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics A S O 1.0 0.1 010.1 2 5 73 1002 5 735 7 0.8 0.6 0.5 0.4 0.2 0 20 40 60 100 120 16014080 PC -- Ta 2SB1123 IC=2A ICP=4A 10ms 1ms 100ms DC operation 2SB1123 Ta=25ϒC Single pulse For PNP, minus sign is omitted Mounted on a ceramic board(250mm

  • 0.8mm) Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- bC --1.0 --0.1 --0.01 --100 --10 77532--10 332 5--100 2--1000 VCE(sat) -- IC 2SB1123 IC / IB=20 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.6 1.4 1.2 1.3 0.8 1.0 0.6 0.4 0.2 0 20 40 60 100 120 16014080 PC -- Tc 2SB1123 Collector Dissipation, PC -- W Case Temperature, Tc -- C Mounted on a ceramic board(250mm
  • 0.8mm) No heat sink b

4 / 4 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Package Outline SOT-89 Summary of Packing Options Package Package Description Packing Quantity Industry Standard SOT-89 Tape/Reel,7”reel 1000 EIA-481-1 DIMENSIONS (mm are the original dimensions) w M e E HE B B 0 2 4 mm scale bp3 bp2 bp1 c D Lp A 1 2 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 HE Lp 4.25 3.75 e 3.0 w 0.13 1.5 1.2 0.8 bp2bp1 0.53 0.40 bp3 1.8 1.4