2SB1123-R

2SB1123_15 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1123 ■ Features

• Low collector-to-emitter saturation voltage.
• Large current capacity and wide ASO.
• Fast switching speed.
• Complementary to 2SD1623 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Collector current -Pulse ICP -4 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W Note.1: Mounted on ceramic board (250mm2 ×0.8mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-50mA -0.3 -0.7 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50mA -0.9 -1.2 VCE= -2V, IC= -100 mA 100 560 VCE= -2V, IC= -1.5 A 40 Turn-ON Time ton 60 Storage Time tstg 450 Fall Time tf 30 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 22 pF Transition frequency fT VCE= -10V, IC= -50mA 150 MHz See specified Test Circuit. ns V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SB1123-R 2SB1123-S 2SB1123-T 2SB1123-U Range 100-200 140-280 200-400 280-560 Marking BF R* BF S* BF T* BF U*

www.kexin.com.cn2 Transistors PNP Transistors 2SB1123 ■ Typical Characterisitics --2.4 --1.6 --1.2 --0.8 --0.4 --2.0 IC -- VCE IB=0 2SB1123 Pulse --2mA --8mA --6mA --4mA --20mA --10mA --50mA --1200 --800 --600 --400 --200 --1000 IC -- VCE IB=0 2SB1123 Pulse--3mA --2mA --1mA --7mA --6mA --5mA --4mA Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA hFE -- IC 1000 100 2 3 5--10 5532--100 2 377 --1000 2SB1123 VCE= --2V Collector Current, IC -- mA DC Current Gain, hFE --1200 --1000 --800 --600 --400 --200 IC -- VBE 2SB1123 VCE= --2V Base-to-Emitter Voltage, VBE -- V Collector Current, IC -- mA fT -- IC 1000 100 2 3 5--10 2 3 5--100 2 377 --1000 2SB1123 VCB=10V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Cob -- VCB 01--0.1-- 100 2 73 5 --1002 73 5 2SB1123 f=1MHz Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1123 ■ Typical Characterisitics A S O 1.0 0.1 010.1 2 5 73 1002 5 735 7 0.8 0.6 0.5 0.4 0.2 0 20 40 60 100 120 16014080 PC -- Ta 2SB1123 IC=2A ICP=4A 10ms 1ms 100ms DC operation 2SB1123 Ta=25ϒC Single pulse For PNP, minus sign is omitted Mounted on a ceramic board(250mm2• 0.8mm) Collector Current, IC -- A Collector-to-Emitter Voltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- bC --1.0 --0.1 --0.01 --100 --10 77532--10 332 5--100 2--1000 VCE(sat) -- IC 2SB1123 IC / IB=20 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1.6 1.4 1.2 1.3 0.8 1.0 0.6 0.4 0.2 0 20 40 60 100 120 16014080 PC -- Tc 2SB1123 Collector Dissipation, PC -- W Case Temperature, Tc -- C Mounted on a ceramic board(250mm 2•0.8mm) No heat sink b