2SB1121 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Features
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -30 V Collector-emitter voltage V CEO -25 V Emitter-base voltage V EBO -6 V Collector current I C -2 A Collector current (pulse) I CP -5 A Collector dissipation P C 500 mW Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0
www.kexin.com.cn 2SB1121 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = -20V , IE =0 - 0 . 1 ì A Emitter cutoff current I EBO VCB =- 4 V,IE =0 - 0 . 1 ì A DC current Gain h FE VCE =- 2 V,IC = -100mA 100 560 Gain bandwidth product f T VCE = -10V , IC = -50mA 150 MHz Collector-emitter saturation voltage V CE(sat) IC = -1.5A , IB = -75mA -0.35 -0.6 V Base-emitter saturation voltage V BE(sat) IC = -1.5A , IB = -75mA -0.85 -1.2 V Collector-base breakdown voltage V (BR)CBO IC = -10ìA , IE =0 - 3 0 V Collector-emitter breakdown voltage V (BR)CEO IC =- 1 m A,RBE = -25 V Emitter-base breakdown voltage V (BR)EBO IE = -10ìA , IC =0 - 6 V Output capacitance C ob VCB = -10V , f = 1MHz 32 pF Turn-on time t on 60 ns Storage time t stg 350 ns Fall time t f 25 ns hFE Classification Marking Rank E F G hFE 100 200 160 320 280 560 BC