2SB1121 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
« Adoption of FBET, MBIT processes. « Low collector-to-emitter saturation voltage. . Large current capacity and wide ASO, « Fast switching speed. . Very small size making it easy to provide high-density, small-sized hybrid IC's. ( ): 28B1121 Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vozo (-)30 v Collector to Emitter Voltage Vero (-)25 Vv Emitter to Base Voltage Viepo (~)6 v Collector Current Ic (-)2 A Collector Current(Pulse) Iop (-)5 A Collector Dissipation Po 500 mW Po Mounted on ceramic board (250mm* x 0.8mm) 1.3 W Junction Temperature Tj 150 2c Storage Temperature Tstg -55 to +150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Ippo Vope(-)20V,Ip=0 (=)0.1 pA Emitter Cutoff Current Ippo Vipe(-)4V,IQ=0 (-)0.1 pA DC Current Gain hep(1) Voge(-)2V,Ig=(-)100mA 100* 560* hpp(2) Vou (-)2¥To=(-) 1 5A 65 Gain-Bandwidth Product fp Vogz(-)10V,I9=(-)50mA 150 MEz C-E Saturation Voltage Vor(sat) Tget-)1.54,Tg(~)75mA 0.18 O44 Vv (-0.35)(-0.6) V B-E Saturation Voltage Vap(sat) Ig=(~)1.5A,Ip=(~)75mA (-)0.85(-)1.2 V Continued on next page. *:The 2SB1121/2SD1621 are classified by 100mA hpp as follows: Package Dimensions 2038 Marking 2SB1121:BD pg rank :R,S,T,U (unit: mm) . 28D 1621:DD 45 15. Switching Time Test Circuit ec C1 a eed qa JLo” ie “@ ° 28 weot To _ fs SG P 04 + 50 , ' cer | ts con P40 0.8 & 7 E; Emitter 201g|=—20152= 1g s00mA Unit (Resistance : 2, Capacitance : F) C: Collector (For PNP, the polarity is reversed.) B: Base (Bottom View) SANYO: PCP SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4107KI/3045MW,TS No. 1787-1/3
2$B1121/2SD1621 Continued from preceding page. min typ max unit C-B Breakdown Voltage — V(prycgo Ic=(-)10HA,Ip=0 (-)30 v C-E Breakdown Voltage Vopr)ceo Z¢=(-)1mA,Rpp=co (-)25 v E-B Breakdown Voltage V(BR)EBO Tp=(~) 10pA, Ee=0 (-)6 v Output Capacitance Cop Vop=(~) 10V, f= 1MHz 19 pF (32) pF Turn-ON Time ton See specified Test Circuit. 60 ns " (60) ns Storage Time tstg (350) ns Fall Time te " 25 ns " (25) ns ne Ic - Vee 20 Ic - Vee "REY PR et a < — 2500 AL & | epee) + CA ES PY 2 Ce Ose PO eee . ol ge ay 8, yee : Weis § Zee Le // 7-2 a / 7 8 [Br TT 3 a= At | tT | tt te=0 | | Wit | [tt ie=o T | ) -200 ~400 600 800 1000 0 200 600 600 800 1000 Collector to Emitter Voltage,Vog - mV Collector to Emitter Voltage,Vop - mV
32 Tc - VBE 1000 hee - I¢
. 3S 11217 28912 || 2881 12172801621 LP —EE <2 For PAP, minds sign 48 omitted. l E Mit minus aaa tT] peed Ce ee S| oe Pio el) bee Ee Pe man é | | | | / gg ti tie B12 Y a -ititt Tit titi gt f | TP) 8 eee . y a et ee o| | | | TYE ft Po Base to Emitter Voltage, Vgp - V Collector Current,Ig - A 1 1000 fr- Ic Cob - Vee = Pale HHH * 281 1217 250 1624 & For PR, minus sign is petite | {| 1 100 For PNP, minus sign is omitted. 3 2 baleen eS PERT E ola ws 8 | 3 s pot TT 8 — Bitty ye | Brey, > | 2 7 Oo} Ch ei & % 5 700 7000 8 a ar) $ Collector Current,Ip - mA Collector to Base Voltage,Voy - V ese No. 1787-2/3
a> 9 Voe(sat) - Ic Me Pc - Ta Be Pest 72mg = Posptiar Z2snie21 | [| [ ] ga Ic/ Ig=16-} Co 1.6 — 3 For PNP, minus sign 4s omitted.. 2 | | [| Ba J 4 ty 144 —} fe S 3 agit TT TP TT] ge Re [TT || Fa A A 3 ; | y o! fy Fy] 3¢é SE Sao IN, : qo Oe 5 a ie a 20.8 fe - soit li tere aot TP TOR 8% 0, [ool 0.6 Sev ie a Pad a 5 OS &,' |_| 5 a a a 7 204 To SN 8 see wa 8 teers do 2, 2 ole) eT [ >S& 8 oof tre | eo Se 0.01 01 1.0 o 20 40° 60 80 100 120 140 160 Collector Current,Ig - A Ambient Temperature,Ta ~ °C
10 ASO _
asniizi7 221] 1 [ TTT} “ B [| a 1 ptf RAS tt | 2 pe WoT eo Ne 2 44 NTT ARE § s— “NA é J ti rea LT AQT _ x q 5 ° 1 NEP NT I B Fra=25°C - XN 8 9 1[Sinete pulse | | | ~ TL q|Mounted on ceramic board LIN S (250m? x 0.8mm) {4 g{For PNP, minus sign is omitted. {|| | 1.0 10 Collector to Emitter Voltage, Vop - V WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. y y M Anyone purchasing any products described or contained herein for an above-mentioned use shall: D Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of 188 rt their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- c y eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. es No. 1787-3/3