2SB1120_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1120 ■ Features
- Very small size making it easy to provide high highdensity, small-sized hybrid IC’s.
- Low collector-to-emitter saturation voltage
- Large current capacity : IC=–2.5A, ICP=–5A. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -10 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -2.5 Collector current -Pulse ICP -5 Collector Power Dissipation 0.5 (Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A PC W Note.1: Mounted on ceramic board (250mm ×0.8mm)2 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -10 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -16V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-150mA -0.25 -0.45 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-150mA -1.2 VCE= -2V, IC= -500 mA 100 560 VCE= -2V, IC= -3 A 70 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 70 pF Transition frequency fT VCE= -10V, IC= -50mA 250 MHz V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SB1120-E 2SB1120-F 2SB1120-G Range 100-200 160-320 280-560 Marking BC E* BC F* BC G*
www.kexin.com.cn2 Transistors PNP Transistors 2SB1120 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1120 ■ Typical Characterisitics