2SB1120 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. Large current capacity : IC=-2.5A, ICP=-5A. Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -20 V Collector-emitter voltage V CEO -10 V Emitter-base voltage V EBO -7 V Collector current I C -2.5 A Collector current (pulse) I CP -5 A Collector dissipation P C 500 mW Jumction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 hFE Classification Marking Rank E F G hFE 100 200 160 320 280 560 BC Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB = -16V , IE = 0 -100 nA Emitter cutoff current I EBO VCB =- 4 V,IE = 0 -100 nA VCE =- 2 V,IC = -500mA 100 560 VCE=-2V IC=-3A 70 Gain bandwidth product f T VCE = -10V , IC = -50mA 250 MHz Collector-emitter saturation voltage V CE(sat) IC = -1.5A , IB = -0.15A -0.25 -0.45 V Collector-base breakdown voltage V (BR)CBO IC = -10ìA , IE =0 - 2 0 V Collector-emitter breakdown voltage V (BR)CEO IC =- 1 m A,RBE = -10 V Emitter-base breakdown voltage V (BR)EBO IE = -10ìA , IC =0 - 7 V Output capacitance C ob VCB =- 1 0 V,f=1 M H z 7 0 p F DC current Gain h FE