2SB1115-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors ■ Features
- Low VCE(sat) VCE(sat)=-0.2V at 1A
- Complementary to 2SD1615-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -1 Collector current -Pulse (Note.1) ICP -2 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-1 A, IB=-50mA -0.2 -0.3 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-1 A, IB=-50mA -0.9 -1.2 Base - emitter voltage (Note.1) VBE VCE= -2V, IC= -50 mA -0.6 -0.7 VCE= -2V, IC= -100 mA 135 340 600 VCE= -2V, IC= -1 A 100 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 25 pF Transition frequency fT VCE= -2V, IC= -100mA 80 120 MHz V uA DC current gain (Note.1) hFE V Note.1: Pulse: PW ≤ 350us,Duty Cycle ≤ 2℅ ■ Classification of hfe(1) Type 2SB1115-M-HF 2SB1115-L-HF 2SB1115-K-HF Range 135-270 200-400 300-600 Marking YM F YL F YK F
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB1115-HF
www.kexin.com.cn2 Transistors ■ Typical Characterisitics PNP Transistors 2SB1115-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics PNP Transistors 2SB1115-HF