2SB1114-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors ■ Features
- High Dc current gain hFE=135 to 600
- Low VCE(sat) VCE(sat)=-0.3V at 1.5A
- Complementary to 2SD1614-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Collector current -Pulse ICP -3 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -16V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1.5 A, IB=-50mA -0.3 -0.5 Base - emitter saturation voltage VBE(sat) IC=-1.5 A, IB=-50mA -1.05 -1.2 Base - emitter voltage VBE VCE= -6V, IC= -100 mA -0.65 -0.68 -0.75 VCE= -2V, IC= -100 mA 135 350 600 VCE= -2V, IC= -2 A 40 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 60 pF Transition frequency fT VCE= -10V, IE= 50mA 180 MHz V uA DC current gain hFE V ■ Classification of hfe(1) Type 2SB1114-M-HF 2SB1114-L-HF 2SB1114-K-HF Range 135-270 200-400 300-600 Marking ZM F ZL F ZK F
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB1114-HF
www.kexin.com.cn2 Transistors ■ Typical Characterisitics PNP Transistors 2SB1114-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics PNP Transistors 2SB1114-HF