2SB1100 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Silicon PNP Darlington Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 2SB1100
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo=-100V(Min)
- High DC Current Gain- : hFE= 1000(Min)@lc=-10A
- Complement to Type 2SD1591
APPLICATIONS
- Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25X:) SYMBOL VCBO VCEO VEBO Ic ICM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @Ta=25°C Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -100 -100 -10 -20 150 -55-150 UNIT V V V A A A W ¥ "": i Base Collector Knitter * , 3 TO-220Fa package rF 4* U ' jQr • : ' i j K i I '. ; t ^ 4 H -*-R- DIM A B C D F G H J K L N Q R S M V ' 4 *~ r^~L ^.-KV rJ rNTD mm WIN 16.35 9.54 4.35 0.75 3.20 6.90 5.15 0.45 13.35 1.10 4.98 4,85 2.56 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0,90 3.40 7.20 5.45 0.75 13.65 1.30 5.18 5.15 3.25 2.90 2.05 1.50 N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time or'yoi In press. However. N.I Semi-Condiietors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-C'onductors encourages customers to \\erily thai datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Darlington Power Transistor 2SB1100
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL VcE(sat) VeE(sat) ICBO IEBO HFE PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc=-10A; lB=-25mA lc=-10A; !B=-25mA Vce=-100V; IE=0 VEB= -5V; lc= 0 lc=-10A;VCE=-2V MIN 1000 TYP. MAX -1.5 -2.0 -10 30000 UNIT V V MA mA Switching Times ton tstg tf Turn-on Time Storage Time Fall Time Vcc^ -50V, RL= 5D , lc=-10A;lBi=-lB2=-25mA, 1.0 5.0 2.0 u s M s M s Classifications M 1000-3000 L 2000-5000 K 4000-10000 J 8000-30000