2SB1100 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc ProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 isc SiliconPNPDarlingtonPowerTransistor 2SB1100
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=-100V(Min)
- High DCCurrentGain- :hFE= 1000(Min)@ IC=-10A
- ComplementtoType 2SD1591
APPLICATIONS
- Designedforaudiofrequency power amplifierand low speedhigh currentswitching industrialuse. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -100 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -8 V IC CollectorCurrent-Continuous -10 A ICM CollectorCurrent-Pulse -20 A IB BaseCurrent-Continuous -1 A PC CollectorPowerDissipation @Ta=25℃ 2 W CollectorPowerDissipation @TC=25℃ 30 TJ JunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
INCHANGE Semiconductor isc ProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconPNPDarlingtonPowerTransistor 2SB1100 ELECTRICALCHARACTERISTICS Tj=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=-10A;IB=-25mA -1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-10A;IB=-25mA -2.0 V ICBO CollectorCutoffCurrent VCB=-100V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -3 mA hFE DCCurrentGain IC=-10A;VCE=-2V 1000 30000 SwitchingTimes ton Turn-onTime VCC≈ -50V,RL=5Ω, IC=-10A;IB1=-IB2=-25mA, 1.0 μs tstg StorageTime 5.0 μs tf FallTime 2.0 μs hFE Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000