2SB1095 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J$£mi-(-onducto'i Lpioducti, U nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1095
DESCRIPTION
- High Collector Current:: lc= -4A
- Low Collector Saturation Voltage : VCE(sa.)= -1.5V(Max)@lc= -3A
- Complement to Type 2SD1586
APPLICATIONS
- Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation @ Ta=25°C Total Power Dissipation @ Tc=25'C Junction Temperature Storage Temperature Range VALUE -100 -100 -0.8 150 -55-150 UNIT V V V A A W f FIH: 1 Base
2 Collector
3 Emitter
i i
- *— i »*-( H f DIM A B c D F G H J K L N Q R S u V mm WIN 16.S5 S.54 4,35 0,75 3,20 6.90 5.15 0.45 13.35 1.10 4.93 445 2. 65, 2.70 1.75 1.30 MAX 17.15 10.10 4,65 o,so 3.40 7.20 5.45 0,75 13,65 1.30 5.1S 5.15 3.25 2.90 2.05 1.50 N,l Semi-Conductors reserves the right to ehange test conditions, parameter limits and package dimensions uithuut mitiee. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable at the time nl't'.o to press. I Umcver, N,l Semi-Conductors assumes no responsibility for an> errors or omissions discovered in its us N.I Seini-Conduelors encoui'iiiies customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB1095
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL VcE(sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -3A; IB= -0.3A lc= -3A; IB= -0.3A VCB=-100V;IE=0 VEB= -7V; lc= 0 lc= -50mA; VCE= -5V lc= -0.5A; VCE= -5V IC=-0.1A;VCE=-5V MIN TYP. MAX -1.5 -2.0 -10 -10 200 UNIT V V UA u A MHz hpE-2 Classifications M 40-80 L 60-120 K 100-200