2SB1090 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
\\o ducts., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1090
DESCRIPTION
- High Collector Current:: lc= -4A
- Low Collector Saturation Voltage :VCE(sa.r-1.5V(Max)@lc=-3A
- Complement to Type 2SD1568
APPLICATIONS
- Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation @ Ta=25°C Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -100 -100 -0.8 1.3 150 -55-150 UNIT V V V A A W w PIH: 1 Base , 2 Collector ; ' 3 Emitter 1 ' ^ TO-220C package '4? A T 1
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- '-> * H K T C A T fP i j DIV A B C D F G H J K L Q R S u V mm WIN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4.50 0.90 3,70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package Jimon.sions uithout notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time ofgoini: to press. I lo\\\\e\\er. N.I Semi-Conductors assumes no responsibility Tor any errors or omissions discovered in its use. N.I Semi-Conductors ciicourii.ues customers to verily thai datasheets are current IxTorc placing orders. Quality 5emi-Conductors
Silicon PNP Power Transistor 2SB1090
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL VcE(sat) VBE(sat) ICBO IEBO hpE-i hFE-2 fr PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -3A; IB= -0.3A lc= -3A; IB= -0.3A VCB=-100V; IE=0 VEB= -7V; lc= 0 lc= -50mA; VCE= -5V lc= -0.5A; VCE= -5V lc=-0.1A;VCE=-5V MIN TYP. MAX -1.5 -2.0 -10 -10 200 UNIT V V U A MA MHz hpE-2 Classifications M 40-80 L 60-120 K 100-200