2SB1090 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc ProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1
DESCRIPTION
- High CollectorCurrent::IC=-4A
- LowCollectorSaturationVoltage :VCE(sat)=-1.5V(Max)@IC=-3A
- ComplementtoType 2SD1568
APPLICATIONS
- Designedforpower supplies oravariety ofdrives in audio and otherequipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -100 V VCEO Collector-EmitterVoltage -100 V VEBO Emitter-BaseVoltage -7 V IC CollectorCurrent-Continuous -4 A IB BaseCurrent-Continuous -0.8 A PC TotalPowerDissipation @Ta=25℃ 1.3 W TotalPowerDissipation @TC=25℃ 40 TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
INCHANGE Semiconductor isc ProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 isc SiliconPNPPowerTransistor 2SB1090 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=-3A;IB=-0.3A -1.5 V VBE(sat) Base-EmitterSaturationVoltage IC=-3A;IB=-0.3A -2.0 V ICBO CollectorCutoffCurrent VCB=-100V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-7V;IC=0 -10 μA hFE-1 DCCurrentGain IC=-50mA;VCE=-5V 20 hFE-2 DCCurrentGain IC=-0.5A;VCE=-5V 40 200 fT Current-Gain—BandwidthProduct IC=-0.1A;VCE=-5V 20 MHz hFE-2 Classifications M L K 40-80 60-120 100-200