2SB1073-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low collector to emitter saturation voltage VCE(sat).
  • Large peak collector current ICP. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -4 Collector current -Pulse ICP -7 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe Type 2SB1073-Q-HF 2SB1073-R-HF Range 120-205 180-315 Marking IQ F IR F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA，IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -30V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -7V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-100mA -0.6 -1 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-100mA -1.2 DC current gain hFE VCE= -2V, IC= -2 A 120 315 Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz 40 pF Transition frequency fT VCE= -6V, IE= 50mA,f=200MHz 120 MHz V uA V
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB1073-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0610 40 12080 14020 10060 1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) 1200 1000 800 600 400 200 Ta=25˚C –120µA –100µA –180µA –160µA –140µA –20µA –40µA –60µA –80µA IB=–200µA Collector to emitter voltage VCE (V) Collector current IC (mA) –12 –10 VCE=–2V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (A) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 IC/IB=30 Ta=25˚C Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE=–2V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 120 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC IaT — C — VCE IC — VBE VCE(sat) — I C hFE — I C Cob — VCB PNP Transistors 2SB1073-HF