2SB1071 SAVANTIC

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A

DESCRIPTION

  • With TO-220Fa package
  • Low collector saturation voltage
  • High speed switching

APPLICATIONS

  • For low voltage switching applications PINNING PIN DESCRIPTION

1 Emitter

2 Collector

3 Base

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB1071 -40 VCBO Collector-base voltage 2SB1071A Open emitter -50 V 2SB1071 -20 VCEO Collector -emitter voltage 2SB1071A Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A Ta=25 2.0 PC Collector power dissipation TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB1071 -20 V(BR)CEO Collector-emitter breakdown voltage 2SB1071A IC=-10mA ,IB=0 -40 V VCEsat Collector-emitter saturation voltage I C=-2A; IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage I C=-2A; IB=-0.1A -1.5 V ICBO Collector cut-off current V CB=-40V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -50 µA hFE-1 DC current gain I C=-0.1A ; VCE=-2V 45 hFE-2 DC current gain I C=-1A ; VCE=-2V 60 260 fT Transition frequency I C=-0.5A ; VCE=-5V 150 MHz Switching times ton Turn-on time 0.3 µs tstg Storage time 0.4 µs tf Fall time IC=-2A; IB1=-IB2=-0.2A 0.1 µs hFE-2 Classifications R Q P 60-120 90-180 130-260

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)