2SB1070A_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB1070A ■ Features

  • Low collector-emitter saturation voltage VCE(sat).
  • High-speed switching. 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -4 Collector current -Pulse ICP -8 Collector Power Dissipation PC 1.3 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe(1) Type 2SB1070A-Q 2SB1070A-P Range 90-180 130-260 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -10 mA，IB=0 -40 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50V , IE=0 -50 Emitter cut-off current IEBO VEB= -5V , IC=0 -50 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-100mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-100mA -1.5 VCE= -2V, IC= -1 A 90 260 VCE= -2V, IC= -100 mA 45 Turn-on time ton 0.3 Storage time tstg 0.4 Fall time tf 0.1 Transition frequency fT VCE = −5 V, IC = − 0.5 A, f = 10 MHz 150 MHz IC = -2 A,IB1 = -0.2 A,IB2 = 0.2 A, VCC = -20 V us DC current gain hFE V uA V

www.kexin.com.cn2 Transistors PNP Transistors 2SB1070A ■ Typical Characterisitics VBE(sat) IC hFE IC fT IC PC Ta IC VCE VCE(sat) IC ton , tstg , tf IC Safe operation area 0510 52152 50 10075 Collector power dissipation PC (W) Ambient temperature Ta (°C) (1)TC=Ta (2)With a 50×50×2mm Al heat sink (3)Without heat sink (PC=1.3W) (1) (2) (3) TC=25˚C –40mA –50mA –45mA –30mA –35mA –20mA –15mA –10mA –25mA –5mA IB=–80mA Collector current I C (A) Collector-emitter voltage VCE (V) − 0.01 − 0.01 − 0.1 −10 −100 − 0.1 −1 −10 Collector-emitter saturation voltage V CE(sat) (V) Collector current I C (A) IC/IB=20 25˚C –25˚C TC=100˚C − 0.01 − 0.01 − 0.1 −10 −100 − 0.1 −1 −10 IC/IB=20 TC=–25˚C 100˚C 25˚C Base-emitter saturation voltage VBE(sat) (V) Collector current I C (A) − 0.1 −10 −100 −1 000 VCE =–2V TC=100˚C 25˚C –25˚C Forward current transfer ratio h FE Collector current I C (A) 0.1 100 1 000 VCE=–2V f=10MHz TC=25˚C Transition frequency f T (MHz) Collector current I C (mA) − 0.01 − 0.1 −10 −100 −10 −100 −1 000 Collector current I C (A) Collector-emitter voltage VCE (V) Non repetitive pulse TC=25˚C t=10ms t=300ms t=1ms ICP IC 2SB1070A 0.01 0.1 0 −8−2 −6−4 Turn-on time t on , Storage time t stg , Fall time t f (µs) Collector current IC (A) tstg ton tf Pulsed tw =1ms Duty cycle=1% IC/IB=10 (–IB1=IB2) VCC=–20V TC=25˚C Rth t 10410310210110−110−210−3 10−2 10−1 102 Time t (s) Thermal resistance R th (°C/W) (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) (2)