2SB1026_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB1026 ■ Features
- Low frequency power amplifier
- Complementary to 2SD1419 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector current -Pulse (Note.1) ICP -2 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW ≤ 10ms,Duty cycle≤ 20℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -100 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -100V , IE=0 -10 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-500m A, IB=-50mA -1 Base - emitter saturation voltage VBE(sat) IC=-500m A, IB=-50mA -1.2 Base - emitter voltage VBE VCE= -5V, IC= -150 mA -0.9 VCE= -5V, IC= -150 mA 60 200 VCE= -5V, IC= -500 mA 30 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 pF Transition frequency fT VCE= -5V, IC= -150mA 140 MHz DC current gain hFE V uA V ■ Classification of hfe(1) Type 2SB1026-L 2SB1026-M Range 60-120 100-200 Marking DL DM
www.kexin.com.cn2 Transistors PNP Transistors 2SB1026 ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (bC) Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 1.2 0.8 0.4 Typical Output Characteristics Collector to Emitter Voltage VCE (V) Collector Current IC (A) –1.0 –0.8 –0.6 –0.2 –0.4 IB = 0 –0.5 mA –5–10 –20–30 –40 –60 –80 –100 –120 Typical Output Characteristics –10 –20 –50 –100 –200 –500 Base to Emitter Voltage VBE (V) Collector Current IC (mA) VCE = –5 V Pulse Ta = 75 C –25 DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 100 200 300 400 500 600DC Current Transfer Ratio hFE Ta = 75 C –25 VCE = –5 V Pulse b b Gain Bandwidth Product vs. Collector Current 100 200 300 Collector Current I C (mA) Gain Bandwidth Product fT (MHz) VCE = –5 V Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Collector to Base Voltage VCB (V) 100 200 f = 1 MHz IE = 0
www.kexin.com.cn 3 Transistors PNP Transistors 2SB1026 ■ Typical Characterisitics Saturation Voltage vs. Collector Current Collector Current IC (mA) Base to Emitter Saturation Voltage VBE (sat) (V) Collector to Emitter Saturation Voltage VCE (sat) (V) –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6 IC = 10 IB Pulse VBE (sat) VCE (sat) –25 Ta = 75 C Ta = –25 Cb b