2SB1018A NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, O na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1018A

DESCRIPTION

  • Low Collector Saturation Voltage- : VCE(Sa.)= -0.5V(Max)@lc= -4A
  • High Current Capability- lc= -7A
  • Complement to Type 2SD1411A

APPLICATIONS

  • High current switching applications.
  • Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -100 -80 150 -55-150 UNIT V V V A A W 1 •< FIM: 1 Base

2 Collector

. , 3 Emitter " " TO-220F package B - - C - -S- f : • i L - -

  • - D - N - u A ? -R- K J - - DIM A B C D F H J K L N Q R U mm WIN 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 MAX 15.05 10.10 4.60 0,90 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable; at the time of going 10 press. IKmever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use." N.I Senii-Coiuluctors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SB1018A

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VsE(sat) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; IB= 0 |c= -4A; IB= -0.4A lc= -4A; IB= -0.4A VcB=-100V;lE=0 VEB= -5V; lc= 0 lc= -1A; VGE= -1V |c= -4A; VCE= -1V le=0;VCB=-10V;f=1MHz lc= -1A; VCE= -4V MIN -80 TYP. 250 MAX -0.5 -1.4 240 UNIT V V V MA uA PF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time lc=-3.0A,lBi=-lB2=-0.3A, VCc=-30V;RL=10n 0.4 2.5 0.5 u s u s |J S

  • hpE-1 Classifications 70-140 Y 120-240