2SB1018A SAVANTIC

Document overview

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Technical content

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018A

DESCRIPTION

  • With TO-220F package
  • High collector current
  • Low collector saturation voltage
  • Complement to type 2SD1411A

APPLICATIONS

  • Power amplifier applications
  • High current switching applications PINNING PIN DESCRIPTION

1 Emitter

2 Collector

3 Base

Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB Base current -1 A TC=25 30 PC Collector power dissipation Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220F) and symbol

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP . MAX UNIT V(BR)CEO Collector-emitter breakdownvoltage I C=-50mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage I C=-4A ;IB=-0.4A -0.3 -0.5 V VBEsat Base-emitter saturation voltage I C=-4A ;IB=-0.4A -0.9 -1.4 V ICBO Collector cut-off current V CB=-100V; IE=0 -5 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -5 µA hFE-1 DC current gain I C=-1A ; VCE=-1V 70 240 hFE-2 DC current gain I C=-4A ; VCE=-1V 30 fT Transition frequency V CE=-4V;IC=-1A 10 MHz COB Collector output capacitance f=1MHz ; V CB=-10V;IE=0 250 pF Switching times ton Turn-on time 0.4 µs tstg Storage time 2.5 µs tf Fall time I B1=-IB2=-0.3A VCC=30V ,RL=10A 0.5 µs hFE-1 Classifications O Y 70-140 120-240

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018A PACKAGE OUTLINE Fig.2 Outline dimensions

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1018A