2SB1018A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A
DESCRIPTION
- Low Collector Saturation Voltage- : V CE(sat)= -0.5V(Max)@IC= -4A
- High Current Capability- IC= -7A
- Complement to Type 2SD1411A
APPLICATIONS
- High current switching applications.
- Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB B Base Current-Continuous -1 A Collector Power Dissipation @ Ta=25℃ 2 PC Collector Power Dissipation @ T C=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1018A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.4 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -5 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μA hFE-1 DC Current Gain IC= -1A; VCE= -1V 70 240 hFE-2 DC Current Gain IC= -4A; VCE= -1V 30 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 250 pF fT Current-Gain—Bandwidth Product IC= -1A; VCE= -4V 10 MHz Switching Times ton Turn-on Time 0.4 μs tstg Storage Time 2.5 μs tf Fall Time IC= -3.0A ,IB1= -IB2= -0.3A, VCC= -30V; RL= 10Ω 0.5 μs hFE-1 Classifications O Y 70-140 120-240 isc Website：www.iscsemi.cn 2