2SB1018A_06 TOSHIBA

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Technical content

TOSHIBA Transistor Silicon NPN Tr iple Dif fused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications

  • High collector current: I C = −7 A
  • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A)
  • Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −80 V Emitter-base voltage VEBO −5 V Collector current IC −7 A Base current IB −1 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10R1A Weight: 1.7 g (typ.)

Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO V CB = −100 V, IE = 0 ― ― −5 μA Emitter cut-off current IEBO V EB = −5 V, IC = 0 ― ― −5 μA Collector-emitter breakdown voltage V (BR) CEO IC = −50 mA, IB = 0 −80 ― ― V hFE (1) (Note) VCE = −1 V, IC = −1 A 70 ― 240 DC current gain hFE (2) V CE = −1 V, IC = −4 A 30 ― ― Collector-emitter saturation voltage V CE (sat) I C = −4 A, IB = −0.4 A ― −0.3 −0.5 Base-emitter saturation voltage V BE (sat) I C = −4 A, IB = −0.4 A ― −0.9 −1.4 V Transition frequency fT V CE = −4 V, IC = −1 A ― 10 ― MHz Collector output capacitance Cob V CB = −10 V, IE = 0, f = 1 MHz ― 250 ― pF Turn-on time ton ― 0.4 ― Storage time tstg ― 2.5 ― Switching time Fall time t f −IB1 = IB2 = 0.3 A, duty cycle ≤ 1% ― 0.5 ― μs Note: h FE (1) classification O: 70 to 140, Y: 120 to 240 Marking IB1 20 μs VCC = −30 V IB2 Output 10 Ω IB1 IB2Input Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. B1018A Characteristics indicator Part No. (or abbreviation code)

Collector current I C (A) IC – VCE Collector-emitter voltage V CE (V) Collector current I C (A) VCE – IC Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Collector current I C (A) VCE – IC Collector-emitter voltage V CE (V) Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Common emitter Tc = 25°C −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 IB = −20 mA −40 −100 −200 −300 −400 −600 −700 −500 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Common emitter Tc = 100°C IB = −20 mA −40 −100 −200 −300 −400 −600−700 −500 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Common emitter Tc = −55°C IB = −20 mA −100 −150 −200 −300 −400 −500 −600 −700 −0.01 −0.03 Common emitter IC/IB = 10 −0.03 −0.05 −0.1 −0.3 −0.5 −55 Tc = 100°C Common emitter Tc = 25°C −10 IB = −20 mA −60 −40 −80 −100 −120 −140 −160 −180 −200 −0.03 Common emitter VCE = −1 V 100 300 500 1000 −55 Tc = 100°C

Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) Collector current I C (A) Base-emitter saturation voltage VBE (sat) (V) Base-emitter voltage V BE (V) IC – VBE Collector current I C (A) *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.3 −0.5 −10 −20 −3 −10 −30 −100 10 ms* IC max (pulsed)* IC max (continuous) 1 ms* 100 ms* DC operation Tc = 25°C VCEO max Common emitter VCE = −1 V −55 Tc = 100°C −0.1 −0.03 Common emitter IC/IB = 10 25 100 Tc = −55°C −0.3 −0.5 −10 VBE (sat) – IC rth – tw Pulse width t w (s) Transient thermal resistance r th (°C/W) 0.001 0.01 0.1 1 10 100 1000 0.1 Curves apply only to limited areas of thermal resistance. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink 100 (2) (1)

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.