2SB1002_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Tran sistors PNP Transistors 2SB1002 ■ Features

  • Low frequency power amplifier
  • Complementary to 2SD1368 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -70 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -1 Collector current -Pulse (Note.1) ICP -1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW ≤ 10ms,Duty cycle≤ 20℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -70 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-100mA -0.6 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-100mA -1.2 DC current gain hFE VCE= -2V, IC= -100 mA 100 320 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 35 pF Transition frequency fT VCE= -2V, IC= -10mA 150 MHz V uA V ■ Classification of hfe Type 2SB1002-H 2SB1002-J Range 100-200 160-320 Marking CH CJ

www.kexin.com.cn2 Transistors PNP Transistors 2SB1002 ■ Typical Characterisitics 0.4 0.8 1.2 Ambient Temperature Ta (bC) Collector Power Dissipation PC (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 100 150 0 –100 –80 –60 –40 –20 –2 –4 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics –6 –8 –10 IB = 0 –0.05 mA –0.1 –0.15 –0.25 –0.35 –0.45 –0.2 –0.3 –0.4 –2.0 –1.6 –1.2 –0.8 –0.4 –0.4 –0.8 Collector to Emitter Voltage VCE (V) Collector Current IC (A) Typical Output Characteristics –1.2 –1.6 –2.0 IB = 0 –50 –40 –30 –20 –10 mA –1,000 –300 –100 –30 –10 –0.2 –0.4 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics –0.6 –0.8 –1.0 VCE = –2 V 10,000 3,000 1,000 300 100 –3 –10 –30 Collector Current IC (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current –100 –300 –1,000 Pulse VCE = –2 V –0.3 3,000 1,000 300 100 –1.0 –3 Collector to Base Voltage VCB (V) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage –10 –30 –100 –300 f = 1 MHz IE = 0

www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB1002 ■ Typical Characterisitics –10 –1.0 –0.3 –0.1 –0.03 –0.01 –30 –100 Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current –300 –1,000 Pulse IC = 10 IB VCE(sat) VBE(sat)