2SB1001-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low frequency power amplifier
  • Complementary to 2SD1367-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -16 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -2 Collector current -Pulse (Note.1) ICP -3 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW ≤ 10ms,Duty cycle≤ 20℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -16 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -16V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-100mA -0.15 -0.3 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-100mA -1 -1.2 DC current gain hFE VCE= -2V, IC= -100 mA 100 320 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 50 pF Transition frequency fT VCE= -2V, IC= -10mA 150 MHz V uA V ■ Classification of hfe Type 2SB1001-H-HF 2SB1001-J-HF Range 100-200 160-320 Marking BH F BJ F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB1001-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0 50 100 150 Ambient Temperature Ta (bC) Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 1.2 0.8 0.4 Typical Output Characteristics (1) Collector to Emitter Voltage VCE (V) Collector Current IC (mA) –100 –80 –60 –40 –20 IB = 0 –0.05 mA –0.1 –0.2 –0.3 –0.15 –0.25 –0.35 Typical Output Characteristics (2) –2.0 –1.6 –1.2 –0.8 –0.4 Collector to Emitter Voltage VCE (V) Collector Current IC (A) IB = 0 –5 mA –20–25 –15 –10 Typical Transfer Characteristics Collector Current IC (mA) –10 –30 –100 –300 –1,000 Base to Emitter Voltage VBE (V) VCE = –2 V Pulse Ta = 75 C 25 –25 DC Current Transfer Ratio vs. Collector Current Collector Current IC (mA) 100 300 1,000 3,000 10,000DC Current Transfer Ratio hFE Ta = 75bC –25 VCE = –2 V Pulse Collector Current IC (mA) Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) –0.003 –0.01 –0.03 –0.1 –0.3 –3.0 –1.0 IC = 10 IB Pulse Saturation Voltage vs. Collector Current VBE (sat) VCE (sat) b PNP Transistors 2SB1001-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Collector to Base Voltage VCB (V) 100 300 1,000 f = 1 MHz IE = 0 PNP Transistors 2SB1001-HF