2SB1000_15 KEXIN

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www.kexin.com.cn 1 Transistors PNP Transistors 2SB1000 ■ Features

Low frequency power amplifier
Complementary to 2SD1366 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector current -Pulse (Note.1) ICP -1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW ≤ 10ms,Duty cycle≤ 20℅ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-800 mA, IB=-80mA -0.2 -0.3 Base - emitter saturation voltage VBE(sat) IC=-800 mA, IB=-80mA -0.94 -1.1 DC current gain hFE VCE= -2V, IC= -500 mA 85 240 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 38 pF Transition frequency fT VCE= -2V, IC= -500mA 200 MHz V uA V ■ Classification of hfe Type 2SB1000-H 2SB1000-J Range 85-170 120-240 Marking AH AJ

www.kexin.com.cn2 Transistors PNP Transistors 2SB1000 ■ Typical Characterisitics