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1Publication date: April 2003 SJD00030BED 2SB0951 (2SB951), 2SB0951A (2SB951A) Silicon PNP epitaxial planar type darlington For midium-speed switching Complementary to 2SD1277 and 2SD1277A ■ Features
- High forward current transfer ratio hFE
- High-speed switching
- Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm 1: Base 2: Collector 3: Emitter EIAJ: SC-67 Parameter Symbol Rating Unit Collector-base voltage 2SB0951 V CBO −60 V (Emitter open) 2SB0951A −80 Collector-emitter voltage 2SB0951 V CEO −60 V (Base open) 2SB0951A −80 Emitter-base voltage (Collector open) V EBO −7V Collector current I C −8A Peak collector current I CP −12 A Collector power P C 45 W dissipation T a = 25°C2 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage 2SB0951 V CEO IC = −30 mA, IB = 0 −60 V (Base open) 2SB0951A −80 Collector-base cutoff 2SB0951 I CBO VCB = −60 V, IE = 0 −100 µA current (Emitter open) 2SB0951A V CB = −80 V, IE = 0 −100 Emitter-base cutoff current (Collector open) IEBO VEB = −7 V, IC = 0 −2m A Forward current transfer ratio h FE1 * VCE = −3 V, IC = −4 A 1 000 10 000 hFE2 VCE = −3 V, IC = −8 A 500 Collector-emitter saturation voltage V CE(sat) IC = −4 A, IB = −8 mA −1.5 V Base-emitter saturation voltage V BE(sat) IC = −4 A, IB = −8 mA −2.0 V Transition frequency f T VCE = −10 V, IC = −1 A, f = 1 MHz 20 MHz Turn-on time t on IC = −4 A, IB1 = −8 mA, IB2 = 8 mA 0.5 µs Storage time t stg VCC = −50 V 2.0 µs Fall time t f 1.0 µs Note) The part numbers in the parenthesis show conventional part number. 10.0±0.2 5.5±0.2 7.5±0.2 16.7±0.3 0.7±0.1 14.0±0.5 Solder Dip (4.0) 0.5+0.2 –0.1 1.4±0.1 1.3±0.2 0.8±0.1 2.54±0.3 5.08±0.5 213 2.7±0.2 4.2±0.2 4.2±0.2 φ 3.1±0.1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE1 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000 Internal Connection B C E
2SB0951, 2SB0951A
2 SJD00030BED
VCE(sat) IC VBE(sat) IC VBE(sat) IC PC Ta IC VCE VCE(sat) IC 0 160 40 120 80 Collector power dissipation PC (W) Ambient temperature Ta (°C) (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) (1) (4) (3) (2) IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA –0.8mA –0.6mA –0.4mA –0.2mA TC=25˚C Collector current IC (A) Collector-emitter voltage VCE (V) − 0.1 −10 −100 − 0.1 −1 −10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) IC/IB=500 TC=100˚C –25˚C 25˚C − 0.1 − 0.1 −10 −100 −1 −10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C (1) (2) (3) − 0.01 − 0.1 −1 −10 −10 −100 Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) IC/IB=500 TC=–25˚C 25˚C 100˚C − 0.1 − 0.1 −1 −10 −10 −100 (1) (2) (3) (1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25˚C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (A) − 0.1 −1 −10 102 105 104 103 VCE=–3V TC=100˚C 25˚C –25˚C Forward current transfer ratio hFE Collector current IC (A) hFE IC Cob VCB Safe operation area − 0.1 −1 −10 −100 IE=0 f=1MHz T C=25˚C 102 103 104 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector-base voltage VCB (V) Collector current IC (A) Collector-emitter voltage VCE (V) − 0.01 − 0.1 −10 −100 −10 −100 −1 000 t=1ms t=10ms ICP IC 2SB0951A 2SB0951 Non repetitive pulse TC=25˚C DC
2SB0951, 2SB0951A 3SJD00030BED Rth t 10−2 10−1 103 102 10−4 10410310210110−110−210−3 Time t (s) Thermal resistance Rth (°C/W) (1) (2) (1)Without heat sink (2)With a 100×100×2mm Al heat sink
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