2SB774 PANASONIC

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Silicon PNP epitaxial planer type For low-frequency amplification n Features l High emitter to base voltage VEBO . l Protective diodes and resistances between emitter and base can be omitted. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0–0.2 4.0–0.2 5.1–0.213.5–0.5 0.45 +0.2 –0.10.45 +0.2 –0.1 1.27 1.27 2.3–0.2 2.54–0.15 213 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –30 –25 –15 –200 –100 400 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO V CBO V CEO V EBO hFE1 * hFE2 V CE(sat) fT C ob Conditions V CB = –10V, IE = 0 V CE = –20V , IB = 0 IC = –10mA, IE = 0 IC = –2mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –2mA V CE = –2V , IC = –100mA IC = –100mA, IB = –10mA V CB = –10V , IE = 2mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –30 –25 –15 210 typ 150 max –100 460 –0.5 Unit mA mA V V V V MHz pF *hFE1 Rank classification Rank R S hFE1 210 ~ 340 290 ~ 460

0 160 40 120 80 14020 100 60 500 400 300 200 100 450 350 250 150 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –240 –200 –160 –120 –80 –40 Ta=25˚C – 0.2mA –1.6mA – 0.8mA –1.4mA – 0.6mA –1.0mA –1.2mA – 0.4mA IB=–1.8mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –200 –160 –120 –80 –40 –180 –140 –100 –60 –20 VCE =–10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 1000 100 300 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB