2SB766 PANASONIC

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2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A n Features l Large collector power dissipation PC . l Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC * Tj Tstg Ratings –30 –60 –25 –50 –1.5 150 –55 ~ +150 Unit V V V A A W 2SB766 2SB766A 2SB766 2SB766A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 IC = –10mA, IE = 0 IC = –2mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –500mA*2 V CE = –5V , IC = –1A*2 IC = –500mA, IB = –50mA*2 IC = –500mA, IB = –50mA*2 V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –30 –60 –25 –50 typ – 0.2 – 0.85 200 max – 0.1 340 – 0.4 –1.2 Unit mA V V V V V MHz pF *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SB766 AQ AR AS 2SB766A BQ BR BS Marking symbol :A(2SB766) B(2SB766A) Unit: mm 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5–0.1 2.6–0.1 2.5–0.1 0.4max.1.0 +0.1 –0.2 4.0 +0.25 –0.20 3.0–0.15 1.5–0.1 0.4–0.08 0.5–0.08 1.5–0.1 0.4–0.04 1.6–0.2 45° marking 321 Marking Symbol 2SB766 2SB766A 2SB766 2SB766A *2 Pulse measurement * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion

Transistor 2SB766, 2SB766A 0 160 40 120 80 14020 100 60 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.50 –1.25 –1.00 – 0.75 – 0.50 – 0.25 Ta=25˚C IB=–10mA –1mA –2mA –3mA –4mA –5mA –6mA –7mA –8mA –9mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 –25˚C Ta=75˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 75˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 Single pulse Ta=25˚C t=10ms t=1s ICP IC 2SB766A 2SB766 Collector to emitter voltage VCE (V) Collector current IC (A) PC — Ta I C — V CE V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB Area of safe operation (ASO)