Download PDF2SB0726 PANASONIC
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2SB0726 (2SB726) Silicon PNP epitaxial planer type For general amplification I Features G High foward current transfer ratio hFE . G High collector to emitter voltage VCEO . I Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–43A /K35/K2E/K30 /KB1/K30/K2E/K32 /K30/K2E/K37 /KB1/K30/K2E/K31 /K30/K2E/K34/K35 /K2B/K30/K2E/K31/K35 /KD0/K30/K2E/K31 /K32/K2E/K35 /K2B/K30/K2E/K36 /KD0/K30/K2E/K32 /K30/K2E/K34/K35 /K2B/K30/K2E/K31/K35 /KD0/K30/K2E/K31 /K32/K2E/K35 /K31/K32 /K33 /K2B/K30/K2E/K36 /KD0/K30/K2E/K32 /K34/K2E/K30 /KB1/K30/K2E/K32 /K35/K2E/K31 /KB1/K30/K2E/K32/K31/K32/K2E/K39 /KB1/K30/K2E/K35 /K32/K2E/K33 /KB1 /K30/K2E/K32 /K30/K2E/K37 /KB1/K30/K2E/K32 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings –80 –80 –100 250 150 –55 ~ +150 Unit V V V mA mW I Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Symbol I CBO ICEO V CBO V CEO V EBO hFE * V CE(sat) V BE fT Conditions V CB = –10V , IE = 0 V CE = –10V , IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 V CB = –5V , IE = –2mA IC = –20mA, IB = –2mA V CE = –1V , IC = –100mA V CB = –5V , IE = 2mA, f = 200MHz min –80 –80 180 typ 150 max –100 700 – 0.6 –1.2 Unit nA µA V V V V V MHz *hFE Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 Note.) The Part number in the Parenthesis shows conventional part number.
Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –80 –60 –20 –50 –70 –40 –10 –30 Ta=25˚C –100µA –120µA –140µA –180µA –180µA –80µA –60µA –40µA –20µA IB=–200µA Collector to emitter voltage VCE (V) Collector current IC (mA ) –60 –50 –40 –30 –20 –10 VCE =–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 240 200 160 120 VCB =–5V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB
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