Download PDF2SB0642 PANASONIC
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1Publication date: January 2003 SJC00045BED 2SB0642 (2SB642) Silicon PNP epitaxial planar type For low-power general amplification ■ Features
- High forward current transfer ratio hFE
- M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO −60 V Collector-emitter voltage (Base open) V CEO −50 V Emitter-base voltage (Collector open) V EBO −7V Collector current I C −100 mA Peak collector current I CP −200 mA Collector power dissipation P C 400 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V CBO IC = −10 µA, IE = 0 −60 V Collector-emitter voltage (Base open) V CEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −7V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 −1 µA Forward current transfer ratio * hFE VCE = −10 V, IC = −2 mA 160 460 Collector-emitter saturation voltage V CE(sat) IC = −100 mA, IB = −10 mA −1V Transition frequency f T VCB = −10 V, IE = 2 mA, f = 200 MHz 80 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF (Common-emitter reverse transfer) ■ Electrical Characteristics Ta = 25°C ± 3°C Unit: mm 1: Base 2: Collector 3: Emitter Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Note) The part number in the parenthesis shows conventional part number. Rank Q R S hFE1 160 to 260 210 to 340 290 to 460 6.9±0.1 2.5±0.1 (1.0) (1.0) (1.5) (0.85) 0.45±0.05 0.55±0.1 (2.5)(2.5) 213 R 0.7 R 0.9 (0.4) 3.5±0.1 4.5±0.14.1±0.2 2.4±0.21.25±0.05 2.0±0.2 1.0±0.1 (1.5)
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IB VBE IC VBE VCE(sat) IC PC Ta IC VCE IC IB 0 160 40 120 80 14020 100 60 500 400 300 200 100 Collector power dissipation PC (mW) Ambient temperature Ta (°C) −60 −50 −40 −30 −20 −10 Ta = 25°C IB = −300 µA −250 µA −200 µA −150 µA −100 µA −50 µA Collector current IC (mA) Collector-emitter voltage VCE (V) 0 −450−150 −300 −60 −50 −40 −30 −20 −10 VCE = −5 V Ta = 25°C Base current IB (µA) Collector current IC (mA) hFE IC fT IE Cob VCB 0 −1.8− 0.6 − 1.2 −400 −300 −100 −250 −350 −200 −50 −150 VCE = −5 V Ta = 25°C Base-emitter voltage VBE (V) Base current IB (µA) −240 −200 −160 −120 −80 −40 VCE = −5 V Ta = 75°C −25°C 25°C Base-emitter voltage VBE (V) Collector current IC (mA) −1 −10 −100 −1 000 − 0.001 − 0.01 − 0.1 −10 IC / IB = 10 25°C −25°C Ta = 75°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) −1 −10 −100 IE = 0 f = 1 MHz Ta = 25°C Collector-base voltage VCB (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 0.1 1 10 100 160 120 100 140 VCB = −10 V Ta = 25°C Transition frequency fT (MHz) Emitter current IE (mA) −1 −10 −100 −1 000 600 500 400 300 200 100 VCE = −10 V Ta = 75°C 25°C −25°C Forward current transfer ratio hFE Collector current IC (mA)
h Parameter IE h Parameter VCE ICBO Ta Cre VCE NF IE NF IE IC = −1 mA f = 10.7 MHz Ta = 25°C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) 0.01 0.1 1 10 VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C Noise figure NF (dB) Emitter current IE (mA) 0.1 1 10 VCB = −5 V Rg = 50 kΩ Ta = 25°C f = 100 Hz 10 kHz 1 kHz Noise figure NF (dB) Emitter current IE (mA) 0 150 12510025 75 50 100 VCB = −10 V Ambient temperature Ta (°C) ICBO (Ta) ICBO (Ta = 25°C) −1 −10 −100 100 IE = 2 mA f = 270 Hz Ta = 25°C hfe hoe (µS) hie (kΩ) hre (× 10−4) h Parameter Collector-emitter voltage VCE (V) 0.1 1 10 100 VCE = −5 V f = 270 Hz Ta = 25°C hfe hoe (µS) hie (kΩ) hre (× 10−4) h Parameter Emitter current IE (mA)
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