2SA982 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA982
DESCRIPTION
- High Power Dissipation- : Pc= 80W(Max.)@Tc=25°C
- Collector-Emitter Breakdown Voltage- :V(BR)CEO=-140V(Min.)
- Complement to Type 2SC2262
APPLICATIONS
- Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) PIN 1.BASE 2. EMITTER 3. COLLECT OR (CASE) TO-3 package SYMBOL VCBO VCEO VEBO Ic IB PC Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature VALUE -140 -140 150 -65-150 UNIT V V V A A W r r i i IE v-. A t r -N-*| I L 1 r I ! -4U-D k V DIM A B c D ij H K L N Q u V l^v yT\\s 5PL LK / \\^ ^^ 1 -L^J nun MIM MAX 3900 1-5,30 7.80 0.90 t.HO 26.67 8.60 1 tO I 60 1092 546. 11.; 0 1675 19561 *00 3000 430 13.50 1705 19 $2 420 3020 450 t ; B
- I NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conduetors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA982
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) ICBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lo=-50mA;lB= 0 lc= -3A; IB= -0.3A VCB=-140V; IE=0 VEB= -6V; lc= 0 lc= -3A; VCE= -4V IE=0.5A;VCE=-12V MIN -140 TYP. MAX -1.5 -0.1 -0.1 UNIT V V mA mA MHz Switching times tr tstg tf Rise Time Storage Time Fall Time lc= -3A ,RL= 4Q , VCc= -12V IB1=-0.2A; lB2=0.1A 0.85 2.0 0.3 M s M s u s