2SA981 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA981
DESCRIPTION
- High Power Dissipation- : Pc= 80W(Max.)@Tc=25°C
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-120V(Min.)
- Complement to Type 2SC2261
APPLICATIONS
- Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) I PIN 1.BASE Y 2.ByllTTER TV 3. COLLECT OR (C AS E) | TO-3 package SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -120 -120 150 -65-150 UNIT V V V A A W r r IE t "ri^TI i 1 1_ C 0 1 —ik-D r*~ L-» DIM A B C D _J3L_ H K L N Si V 4& ^^ 'PL ,H3B / ; ffl~"^ C ~^*S \\3 nun WIN MAX 3900 25.30 780 O.SOJ 1.40 26.67 8.50 1 10 1.60 1092 54S ii.2.0 1675 19.*0 400 5000 4 30 1350 17.05 1962 420 3020 450 t i B I NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ot'eoii going to press. However. NJ Semi-Conductors assumes no responsibility lor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA981
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL V(BR)ceo VcE(sat) ICBO IEBO hFE fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-50mA;lB=0 lc= -3A; IB= -0.3A VCB=-120V; IE=0 VEB= -6V; lc= 0 lc= -3A; VCE= -4V IE=0.5A;VCE=-12V MIN -120 TYP. MAX -1.5 -0.1 -0.1 UNIT V V mA mA MHz Switching times tr tstg tf Rise Time Storage Time Fall Time lc= -3A ,RL= 40 , Veer -12V IB1=-0.2A; IB2=0.1A 0.85 2.0 0.3 M s M s M S