2SA980 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982
DESCRIPTION
- With TO-3 package
- Complement to type 2SC2260/2261/2262
APPLICATIONS
- For power switching and general purpose
PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA980 -100 2SA981 -120 VCBO Collector-base voltage 2SA982 Open emitter -140 V 2SA980 -100 2SA981 -120 VCEO Collector-emitter voltage 2SA982 Open base -140 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A IB Base current -3 A PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Fig.1 simplified outline (TO-3) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA980 -100 2SA981 -120 V(BR)CEO Collector-emitter breakdown voltage 2SA982 IC=-50mA ;IB=0 -140 V VCEsat Collector-emitter saturation voltage I C=-3A; IB=-0.3A -1.5 V 2SA980 V CB=-100V; IE=0 2SA981 V CB=-120V; IE=0 ICBO Collector cut-off current 2SA982 V CB=-140V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-6V; IC=0 -0.1 mA hFE DC current gain I C=-3A ; VCE=-4V 30 fT Transition frequency I C=-0.5A ; VCE=-12V 20 MHz Switching times tr Rise time 0.85 μs ts Storage time 2.0 μs tf Fall time IC=-3A;RL=4Ω IB1=-0.2A; IB2=0.1A VCC=-12V 0.3 μs
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA980/981/982 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)