2SA914 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION ·
- With TO-126 package
- Complement to type 2SC1953
- Good linearity of hFE
- High VCEO
APPLICATIONS
- For audio frequency power pre-amplifier PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute Maximun Ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -50 mA ICM Collector current-Peak -100 mA PC Collector power dissipation 1 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-0.1mA;IB=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-30mA ;IB=-3mA -1.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 μA hFE DC current gain IC=-10mA ; VCE=-5V 90 450 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 5 pF fT Transition frequency IE=10mA ; VCB=-10V 200 MHz hFE Classifications Q R S T 90-155 130-220 185-330 260-450
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 PACKAGE OUTLINE Fig.2 Outline dimensions