2SA843 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA843
DESCRIPTION
- Collector-Emitter Breakdown Voltage :V(BR)CEO=-150V(Min)
- DC Current Gain : hFE= 60-200@ lc= -0.4A
- Complement to Type 2SC1683
APPLICATIONS
- Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) IP \\N 1.BASE 2.COLLECTOR 3. BETTER TO-220C package SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -200 -150 -0.5 150 -55-150 UNIT V V V A A W r T MQ U i t '; A » 1 J__H K f j C i H DIN A B D F G H J K L a R S U y B H v -fl -f iry -\\ KL fr" j m MIN 15.50 9.90 4.20 0.70 3.40 4.98 2.6S 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 m MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0,60 13.40 1.4S 2.90 2.70 1.35 6.65 8.86 »k J Rh NJ Seini-Condiictors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. I km ever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. " NJ Seini-Conductors encourages customers to verify that datasheets arc current before placiim orders. Qualify Semi-Conductors
Silicon PNP Power Transistor 2SA843
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) ICBO IEBO hFE PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS lc= -5mA; IB= 0 lc= -0.5mA; IE= 0 IE= -0.5mA; lc= 0 lc= -0.5A; IB= -50mA lc=-0.4A;VCE=-10V VCB= -200V; IE= 0 VEB= -4V; lc= 0 lc=-0.4A; VCE=-10V MIN -150 -200 TYP. MAX -1.0 -1.0 -50 -50 200 UNIT V V V V V u A MA
- hFE Classifications p 60-140 Q 85-200