2SA843 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA843
DESCRIPTION
- Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min)
- DC Current Gain : hFE= 60-200@ IC= -0.4A
- Complement to Type 2SC1683
APPLICATIONS
- Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak -2 A PC Total Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA843
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA; IE= 0 -200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -0.4A; VCE= -10V -1.0 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -50 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -50 μ A hFE DC Current Gain IC= -0.4A; VCE= -10V 60 200 hFE Classifications P Q 60-140 85-200