2SA765 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA765
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage
APPLICATIONS
- Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A PC Collector power dissipation T C=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-66) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -80 V VCEsat Collector-emitter saturation voltage I C=-4A; IB=-0.4A -1.5 V VBEsat Base-emitter saturation voltage I C=-4A; IB=-0.4A -2.0 V ICBO Collector cut-off current V CB=-80V; IE=0 -10 µA IEBO Emitter cut-off current V EB=-6V; IC=0 -10 µA hFE DC current gain I C=-1A ; VCE=-4V 50 fT Transition frequency I C=-0.5A ; VCE=-12V 10 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 PACKAGE OUTLINE Fig.2 outline dimensions