2SA765 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA765
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage
APPLICATIONS
- Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outline (TO-66) and symbol
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -80 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A -1.5 V VBEsat Base-emitter saturation voltage IC=-4A; IB=-0.4A -2.0 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-4V 50 fT Transition frequency IC=-0.5A ; VCE=-12V 10 MHz
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 PACKAGE OUTLINE Fig.2 outline dimensions