2SA754 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA754
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min)
- Low Collector Saturation Voltage- : VcEfsatr -1.3V(Max.) @ lc= -1.5A
- Good Linearity of hFE
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) ^^F 11 \\N LEASE 2.COLLECTOR 3. EMITTER TO-220C package SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation® Tc=25'C Junction Temperature Storage Temperature Range VALUE -50 -50 150 -55-150 UNIT V V V A W MQ H A » 1. ^ H K T f cl i H DIW A B C D F G H J K L Q R S u u B H V1r zf -•• fi"1 rr oh — 1 m M!N 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.20 2.70 2.30 1.29 6.45 8.66 m MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0,60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 »r*'J R|"« N.I Seini-Conductors reserves the right to change test conditions, parameter limits and packaue dimensions without notice, liitnrmntinn furnished by N.I Semi-Conductors is believed to be both accurate and reliable at ihe time of going lo press. I louever. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use " N'J Semi -Conductors encourages customers to verity Unit datasheets are current before placina orders. Qualify Semi-Conductors
Silicon PNP Power Transistor 2SA754
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VcE(sat) VBE(on) ICBO hpE-1 tVE-2 fr PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS lc= -5mA; IE= 0 lc= -50mA; RBE= °° !E= -5mA; lc= 0 lc=-1.5A; IB=-0.15A lc=-1A;VCE=-4V VCB= -20V; IE= 0 lc= -1A; VCE= -4V lc=-0.1A;VCE=-4V lc= -0.5A; VCE= -4V MIN -50 -50 TYP. MAX -1.3 -1.5 -100 200 UNIT V V V V V M A MHz
- hFE-i Classifications A 35-70 B 50-120 C 100-200