2SA754 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA754
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -50V(Min)
- Low Collector Saturation Voltage- : V CE(sat)= -1.3V(Max.) @ IC= -1.5A
- Good Linearity of hFE
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -2 A PC Total Power Dissipation@ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA754
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -4 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A B -1.3 V VBE(on) Collector-Emitter On Voltage IC= -1A; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -4V 35 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -4V 35 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 50 MHz hFE-1 Classifications A B C 35-70 50-120 100-200 isc Website：www.iscsemi.cn 2