2SA733-HF_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

Collector-Base Voltage: VCBO=-60V Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatlovesabotrotcelloC CBO -60 V VegatlovrettimeotrotcelloC CEO -50 V VegatlovesabotrettimE EBO -5.0 V I)CD(tnerruCrotcelloC C -150 mA PnoitapissidrewoP C 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 tinUxaMpyTniMsnotiidnoctseTlobmySretemaraP Collector-base breakdown voltage VCBO IC= -50uA,IE V06-0= Collector-emitter breakdown voltage VCEO IC= -1mA , IB V05-0= Emitter-base breakdown voltage VEBO IE= -50uA, IC V5-0= Itnerrucffo-tucrotcelloC CBO VCB= -60 V , IE Au1.0-0= Itnerrucffo-tucrettimE EBO VEB= -5 V , IC Au1.0-0= hniagtnerrucCD FE VCE= -6 V, IC Collector-emitter saturation voltage VCE(sat) IC= -100mA, IB V3.0-81.0-Am01-= Vegatlovrettime-esaB BE(on) VCE=-6V,IC V86.0-26.0-85.0-Am0.1-= Collector output capacitance Cob VCB=-10V,IE Fp75.4ZHM1=f,0= FNerugifesioN VCE=-6V,IC=-0.3mA,Rg=10kΩ,f=100HZ 6 20 dB fycneuqerfnoitisnarT T VCE=-6V,IC zHM05Am01-= =-1mA 120 475 ■ Classification of hfe Type 2SA733-M6-HF 2SA733-L-HF 2SA733-H-HF Range 200-400 120-220 220-475 Marking M6 F CSL F CS 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish F PNP Transistors 2SA733-HF

ww.kexin.com.cn2 Transistors SMD Type Transistors ww Typical Characteristics 001-01-1-1.0- 100 200 300 001-01-1- -10 -100 01-1-1.0- 001-01-1- 200 0 25 50 75 100 125 150 100 150 200 250 -0.1 -10 -100 001-01-1- -0.0 -0.4 -0.8 -1.2 -0 -2 -4 -6 -8 -10 -150 fT — — IC hFE — — COMMON EMITTER VCE=-6V -3 -30-0.3 Ta=100℃ Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) IC Ta=25℃ -30 -300 -30-0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ ICVCEsat — — -500 -150 -3-0.3 -20 Cob Cib REVERSE VOLTAGE V (V) f=1MHz IE=0/IC=0 Ta=25℃ VCB/ VEBCob/ Cib — — CAPACITANCE C (pF) 300 100 -3 -30 VCE=-6V Ta=25℃ TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) Ta COLLECTOR POWER DISSIPATION PC (mW) AMBIENT TEMPERATURE Ta ( )℃ PC — — -150 VBEIC — — -30 -0.3 Ta=25℃ Ta=100℃ COMMON EMITTER VCE=-6V COLLECTOR CURRENT IC (mA) BASE-EMMITER VOLTAGE VBE (V) -0.5 -30-0.2 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ -150 ICVBEsat — — Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) -20uA -18uA -16uA -14uA -12uA -10uA -8uA -6uA -4uA IB=-2uA COMMON EMITTER Ta=25℃ PNP Transistors 2SA733-HF