2SA680 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA680
DESCRIPTION
- High Power Dissipation- : PC= 100W(Max.)@TC=25℃
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.)
- Complement to Type 2SC1080
APPLICATIONS
- Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IE Emitter Current-Continuous 12 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA680
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;IB= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.5 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -2A ; VCE= -5V 40 140 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 15 COB Output Capacitance VCB= -10V; ftest= 1MHz 900 pF fT Current-Gain—Bandwidth Product IC= -2A ; VCE= -5V 6 MHz hFE-1 Classifications R Y 40-80 70-140