2SA679 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA679 2SA680
DESCRIPTION
- With TO-3 package
- Complement to type 2SC1079/1080
- High power dissipation
APPLICATIONS
- For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA679 -120 VCBO Collector-base voltage 2SA680 Open emitter -100 V 2SA679 -120 VCEO Collector-emitter voltage 2SA680 Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IE Emitter current 12 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -65~150 Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA679 2SA680 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA679 -120 V(BR)CEO Collector-emitter breakdown voltage 2SA680 IC=-0.1A ;IB=0 -100 V V(BR)EBO Emitter-base breakdown voltage I E=-10mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-10A; IB=-1A -3.0 V VBE Base-emitter on voltage I C=-10A ; VCE=-5V -2.5 V ICBO Collector cut-off current V CB=-50V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE-1 DC current gain I C=-2A ; VCE=-5V 40 140 hFE-2 DC current gain I C=-7A ; VCE=-5V 15 COB Output capacitance I E=0 ; VCB=-10V; f=1.0MHz 900 pF fT Transition frequency I C=-2A ; VCE=-5V 6 MHz hFE-1 Classifications R Y 40-80 70-140
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA679 2SA680 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)