2SA670 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670
DESCRIPTION
- With TO-220 package Fig.1 simplified outline (TO-220) and symbol
- Low collector saturation voltage
APPLICATIONS
- Inverters;converters
- Power amplification
- Switching regulator ,driver PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A PC Collector power dissipation TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V ICBO Collector cut-off current VCB=-50V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-1A ; VCE=-4V 35 200 fT Transition frequency IC=-0.5A ; VCE=-10V 15 MHz
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)