2SA505 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA505
DESCRIPTION
- Collector-Emitter Breakdown Voltage- V(BR)CEo= -50V (Min.)
- Collector-Emitter Saturation Voltage- VCE(sa.r -0.8V (Max.)® lc= -500mA
APPLICATIONS
- Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IE PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range VALUE -60 -50 -5.0 150 -55-150 UNIT V V V A A W PIN 1. EMITTER 2.COLLECTOR 3. BASE TO-126 package r \\ - D-f -*• G -B— $_-6 If G »• i • 4 2 3 DIM A B C D F G H J K R V ir Q T v »"•- m MIN 1070 770 2,60 0,66 3.10 4,48 2,00 1.35 15.30 3.70 0,40 1.17 -H( f • A V , K f m MAX 10.95 7.90 2.80 0.86 3,30 4..S8 2..20 1.55 16.30 3.90 0.60 1,37 Zf- r*-J
- *-R NJ Semi-Conductors reserves the right to change test conditions, parameter limits and packaue dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. INmever. N.I Semi-Condnctors assumes no responsibility for any errors or omissions discovered in its use. " NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Power Transistor 2SA505
ELECTRICAL CHARACTERISTICS
Tc=25X; unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) VBE(OII) ICBO IEBO hpE-1 hFE-2 fl COB PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=-10mA; IB= 0 IE= -1 mA; lc= 0 lc= -500mA; IB= -50mA lc= -500mA; VCE= -2V VCB= -30V; IE= 0 VEB= -5; lc= 0 lc= -50mA; VCE= -2V lc= -800mA; VCE= -2V lc=-10mA;VCE=-10V lE=0;VCB=-10V;f= 1.0MHz MIN -50 TYP. 100 MAX -0.8 -1.3 -1.0 -1.0 240 UNIT V V V V UA MA MHz PF
- hpE-1 Classifications R 40-80 70-140 Y 120-240