2SA505 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA505
DESCRIPTION
- Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
- Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA
APPLICATIONS
- Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA505
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -0.8 V VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -2V -1.3 V ICBO Collector Cutoff Current VCB= -30V; IE= 0 -1.0 μ A IEBO Emitter Cutoff Current VEB= -5; IC= 0 -1.0 μ A hFE-1 DC Current Gain IC= -50mA; VCE= -2V 40 240 hFE-2 DC Current Gain IC= -800mA; VCE= -2V 13 fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -10V 100 MHz COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 20 pF hFE-1 Classifications R O Y 40-80 70-140 120-240